Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

Abstract

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature $\left(T\right)$ and carrier density $\left(n\right)$. We find a temperature-dependent phonon-limited resistivity ${\rho }_{\mathit{ph}}\left(T\right)$ to be linear in temperature for $T\gtrsim 50\mathrm{K}$ with the room-temperature intrinsic mobility reaching the values of above ${10}^5{\mathrm{cm}}^2∕\mathrm{V}\mathrm{s}$. We comment on the low-temperature Bloch–Grüneisen behavior where ${\rho }_{\mathit{ph}}\left(T\right)\sim T^4$ for unscreened electron-phonon coupling.