High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain
- 31 October 2011
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 4 (11), 114201
- https://doi.org/10.1143/apex.4.114201
Abstract
No abstract availableKeywords
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