Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
- 1 September 2010
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 54 (9), 919-924
- https://doi.org/10.1016/j.sse.2010.04.033
Abstract
No abstract availableKeywords
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