Native point defects in GaxAl1−xAsyP1−y

Abstract

The dependence on alloy composition $x$ and $y$ of the deep levels associated with vacancies and with antisite defects in the quaternary alloy ${\mathrm{Ga}}_x{\mathrm{Al}}_{1-x}{\mathrm{As}}_y{\mathrm{P}}_{1-y}$ is predicted.