Theory of Substitutional Deep Traps in Covalent Semiconductors
- 24 March 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (12), 810-813
- https://doi.org/10.1103/physrevlett.44.810
Abstract
The energies of substitutional deep impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies.
Keywords
This publication has 7 references indexed in Scilit:
- Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in SiliconPhysical Review Letters, 1978
- Self-Consistent Green's-Function Calculation of the Ideal Si VacancyPhysical Review Letters, 1978
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- Electronic states of simple-transition-metal impurities in siliconPhysical Review B, 1977
- Localized defects in III-V semiconductorsPhysical Review B, 1976
- Evidence for Radiative Recombination in () Involving an Isolated Nitrogen Impurity State Associated with the MinimumPhysical Review Letters, 1976
- Structure of the valence bands of zinc-blende-type semiconductorsPhysical Review B, 1975