Naphthalenetetracarboxylic Diimide-Based n-Channel Transistor Semiconductors: Structural Variation and Thiol-Enhanced Gold Contacts
- 26 July 2000
- journal article
- research article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 122 (32), 7787-7792
- https://doi.org/10.1021/ja000870g
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- A soluble and air-stable organic semiconductor with high electron mobilityNature, 2000
- Organic complementary ring oscillatorsApplied Physics Letters, 1999
- Field-Effect Transistors Based on Thiophene Hexamer Analogues with Diminished Electron Donor StrengthChemistry of Materials, 1999
- Controlling surfaces and interfaces of semiconductors using organic moleculesOptical Materials, 1998
- New Air-Stable n-Channel Organic Thin Film TransistorsJournal of the American Chemical Society, 1998
- Simultaneous Control of Surface Potential and Wetting of Solids with Chemisorbed Multifunctional LigandsJournal of the American Chemical Society, 1997
- n-Channel Organic Transistor Materials Based on Naphthalene FrameworksJournal of the American Chemical Society, 1996
- Structural Characterization and Surface Modification of Evaporated Thin Films of 5,5‘‘‘-Bis(aminomethyl)-2,2‘:5‘,2‘‘:5‘‘,2‘‘‘-quaterthiophene and Its DihydrochlorideLangmuir, 1996
- Alkanethiol Monolayers on Preoxidized Gold. Encapsulation of Gold Oxide under an Organic MonolayerLangmuir, 1994
- An imide anion radical that dimerizes and assembles into .pi.-stacks in solutionChemistry of Materials, 1991