Thermal component model for electrothermal analysis of IGBT module systems

Abstract

The insulated gate bipolar transistor (IGBT) modules are getting more accepted and increasingly used in power electronic systems as high power and high voltage switching components. However, IGBT technology with high speed and greater packaging density leads to higher power densities on the chips and increases higher operating temperatures. These operating temperatures in turn lead to an increase of the failure rate and a reduction of the reliability. In this paper, the static and dynamic thermal behavior of IGBT module system mounted on a water-cooled heat sink is analyzed. Although three-dimensional finite element method (3-D FEM) delivers very accurate results, its usage is limited by an imposed computation time in arbitrary load cycles. Therefore, an RC component model (RCCM) is investigated to extract thermal resistances and time constants for a thermal network. The uniqueness of the RCCM is an introduction of the time constants based on the Elmore delay, which represents the propagation delay of the heat flux through the physical geometry of each layer. The dynamic behavior predicted by the thermal network is equivalent to numerical solutions of the 3-D FEM. The RCCM quickly offers insight into the physical layers of the components and provides useful information in a few minutes for the arbitrary or periodic power waveforms. This approach enables a system designer to couple the thermal prediction with a circuit simulator to analyze the electrothermal behavior of IGBT module system, simultaneously.