A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET

Abstract
This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high common-mode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions. To enhance the gate-drive power reliability, a power over fiberbased isolated power supply is designed to replace the traditional design based on isolation transformer. It delivers the gate-drive power by laser light via optical fiber over a long distance (>1 m), so a high isolation voltage (>20 kV) is achieved, and the circuit size and weight are reduced. More importantly, it eliminates the parasitic CM capacitance coupling the power stage and control stage, and thus eradicates the control signal distortion caused by high dv/dt in switching transients of the high-voltage SiC devices. In addition, the gate-drive circuit design integrates comprehensive protection functions, including the overcurrent protection, undervoltage/overvoltage lockout, active miller clamping, soft turn off, and fault report. The overcurrent protection responds within 400 ns. The experimental results from a 15kV double-pulse tester are presented to validate the design.
Funding Information
  • National Science Foundation (NSF) (Project 1054479)

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