Demonstration of 3.5 µm Ga1-xInxSb/InAs superlattice diode laser
- 16 February 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (4), 275-276
- https://doi.org/10.1049/el:19950221
Abstract
A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GaInAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47 µm for pulsed operation up to 160 K is observed.Keywords
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