Theoretical performance of InAs/ InxGa1−xSb superlattice-based midwave infrared lasers

Abstract

We show that for appropriate layer widths the performance of ideal InAs/In_xGa_1−xSb superlattice‐based midwave injection lasers can be limited by radiative rather than Auger recombination. The threshold carrier densities and lifetimes are calculated over the 77–300 K temperature range at 3.5 μm. Lifetimes are obtained from detailed calculations of band‐to‐band Auger and radiative recombination rates based on realistic nonparabolic band structures. This system is therefore a promising new laser candidate.