In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs
- 1 April 2017
- journal article
- conference paper
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 464, 143-147
- https://doi.org/10.1016/j.jcrysgro.2016.11.014
Abstract
No abstract availableKeywords
Funding Information
- French National Research Agency (ANR) (ANR-14-CE26-0022)
This publication has 17 references indexed in Scilit:
- ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMTIEEE Electron Device Letters, 2016
- 3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructureApplied Physics Express, 2015
- Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor depositionApplied Physics Letters, 2014
- Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivationSolid-State Electronics, 2013
- Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHzIEEE Electron Device Letters, 2013
- Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrateApplied Physics Letters, 2011
- Thermal oxidation of lattice matched InAlN/GaN heterostructuresphysica status solidi (c), 2010
- Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 2007
- Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layerJournal of Applied Physics, 2005