ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
- 10 March 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 37 (5), 629-632
- https://doi.org/10.1109/led.2016.2540164
Abstract
High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3” SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power of 6 W/mm and a power-added efficiency of 42%. A good extrinsic transconductance value higher than 450 mS/mm and a current density up to 1.55 A/mm were also measured on these transistors.Keywords
Funding Information
- Délégation Générale pour l’Armement through the European Commission.
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