Analysis of temperature sensitivity in semiconductor lasers using gain and spontaneous emission measurements

Abstract

A consistent method to characterize the temperature dependence of bulk InGaAsPsemiconductor laserdiodes is presented. Independent measurements of the gain and spontaneous emissionspectra are conducted, and the spectra are calibrated using their fundamental relationship. This procedure will provide a unique approach to extract precise values for laser diode parameters such as quasi-Fermi level separation, peak modal gain, and total loss. The radiative and nonradiative current densities can then be calculated as a function of temperature and injection current. By comparing the measured data with a theoretical model, the carrier density is calculated. Important phenomena contributing to the strong temperature dependence of long-wavelength bulk InGaAsP/InP lasers are highlighted.