High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (2), 511-523
- https://doi.org/10.1109/3.283799
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasersElectronics Letters, 1993
- Improved performance of compressively as well as tensile strained quantum-well lasersApplied Physics Letters, 1992
- Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structuresApplied Physics Letters, 1992
- Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applicationsJournal of Crystal Growth, 1991
- Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasersElectronics Letters, 1991
- Useful design relationships for the engineering of thermodynamically stable strained-layer structuresJournal of Applied Physics, 1989
- High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulatorsElectronics Letters, 1989
- Scaling laws and minimum threshold currents for quantum-confined semiconductor lasersApplied Physics Letters, 1988
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band AbsorptionJapanese Journal of Applied Physics, 1980