Growth and strain characterization of high quality GaN crystal by HVPE
- 1 July 2012
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 350 (1), 44-49
- https://doi.org/10.1016/j.jcrysgro.2011.12.020
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Depth profile of residual strain in free-standing GaN substrates measured by cross-sectional micro-reflectance spectroscopyphysica status solidi (c), 2011
- Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted SeparationJapanese Journal of Applied Physics, 2003
- Growth and characterization of freestanding GaN substratesJournal of Crystal Growth, 2001
- Comprehensive characterization of hydride VPE grown GaN layers and templatesMaterials Science and Engineering: R: Reports, 2001
- Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)Journal of Crystal Growth, 2000
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- An approach to threading dislocation ‘‘reaction kinetics’’Applied Physics Letters, 1996
- Some elementary connections between curvature and mismatch strain in compositionally graded thin filmsJournal of the Mechanics and Physics of Solids, 1996
- Elastic energy and line directions of grown-in dislocations in KDP crystalsphysica status solidi (a), 1974
- Directions of dislocation lines in crystals of ammonium hydrogen oxalate hemihydrate grown from solutionActa Crystallographica Section A, 1973