Observation of Strong Ordering inGaxIn1xPalloy semiconductors

Abstract
Extremely strong superstructure reflections have been observed for the first time by transmission electron microscopy for (110) edge-on Ga0.5 In0.5P crystals lattice matched to GaAs. Growth was carried out by metal-organic vapor-phase epitaxy. A monolayer superlattice (SL) of (Ga-rich plane) (In-rich plane)... is formed along [¯111] and [1¯11] directions. The substrates are found to be playing a vital role in the SL formation. Band-gap energy reduction (≅80 meV) has been observed for layers with these SL's.