High-field transport and velocity saturation in graphene
- 13 July 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 95 (2), 023120
- https://doi.org/10.1063/1.3182740
Abstract
High-field transport in graphene is studied by the Monte Carlo simulation. The results indicate velocity and current saturation in agreement with a recent experiment [I. Meric, M. Y. Han, A. F. Young, B. Oezyilmaz, P. Kim, and K. Shepard, Nat. Nanotechnol.3, 654 (2008)]. The saturation current scales as the square root of the charge density, or equivalently, the square root of the gate overdrive voltage, which is qualitatively different from siliconfield-effect transistors. By analytical fitting to the numerical simulation results, a simple expression of the field-dependent mobility is obtained at different strengths of charged impurity scattering.This publication has 11 references indexed in Scilit:
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