Radiation damage effects in Ga2O3 materials and devices
Top Cited Papers
- 19 October 2018
- journal article
- review article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 7 (1), 10-24
- https://doi.org/10.1039/c8tc04193h
Abstract
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.Keywords
Funding Information
- Defense Threat Reduction Agency (HDTRA1-17-1-0011)
- National Research Foundation of Korea (2017M1A2A2087351, 2017M1A3A3A02015033)
- Ministry of Education and Science of the Russian Federation (K2-2014-055)
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