A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current
- 1 June 2000
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 44 (6), 895-903
- https://doi.org/10.1016/s0038-1101(00)00028-9
Abstract
No abstract availableKeywords
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