100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
- 26 September 2010
- journal article
- Published by Springer Science and Business Media LLC in Nature Photonics
- Vol. 4 (11), 767-770
- https://doi.org/10.1038/nphoton.2010.220
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Characteristics of high Al‐content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxyphysica status solidi (c), 2010
- Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum WellsApplied Physics Express, 2010
- Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiencyApplied Physics Letters, 2009
- Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxyJournal of Crystal Growth, 2009
- Efficiency of light emission in high aluminum content AlGaN quantum wellsJournal of Applied Physics, 2009
- Optical anisotropy in [0001]-orientedquantum wellsPhysical Review B, 2009
- Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxyApplied Physics Letters, 2008
- Ultraviolet light-emitting diodes based on group three nitridesNature Photonics, 2008
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Band structure and fundamental optical transitions in wurtzite AlNApplied Physics Letters, 2003