Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors
- 10 December 2008
- journal article
- Published by Elsevier BV in Sensors and Actuators B: Chemical
- Vol. 135 (1), 188-194
- https://doi.org/10.1016/j.snb.2008.08.005
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistorsApplied Physics Letters, 2005
- Remote sensing system for hydrogen using GaN Schottky diodesSensors and Actuators B: Chemical, 2004
- Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applicationsphysica status solidi (c), 2003
- Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodesApplied Physics Letters, 2003
- Gas sensitive GaN/AlGaN-heterostructuresSensors and Actuators B: Chemical, 2002
- Hydrogen response mechanism of Pt–GaN Schottky diodesApplied Physics Letters, 2002
- SiC Based Field Effect Gas Sensors for Industrial Applicationsphysica status solidi (a), 2001
- Group-III-Nitride Based Gas Sensing Devicesphysica status solidi (a), 2001
- High temperature Pt Schottky diode gas sensors on n-type GaNSensors and Actuators B: Chemical, 1999
- Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperaturesApplied Physics Letters, 1995