High temperature Pt Schottky diode gas sensors on n-type GaN
- 1 July 1999
- journal article
- Published by Elsevier BV in Sensors and Actuators B: Chemical
- Vol. 56 (1-2), 164-168
- https://doi.org/10.1016/s0925-4005(99)00174-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperaturesApplied Physics Letters, 1995
- Gas sensitive field effect devices for high temperatureSensors and Actuators B: Chemical, 1995
- Evaluation of gas mixtures with high-temperature gas sensors based on silicon carbideSensors and Actuators B: Chemical, 1994
- Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devicesSensors and Actuators B: Chemical, 1993
- Ultrahigh vacuum studies of Pd metal-insulator-semiconductor diode H2 sensorsJournal of Applied Physics, 1987
- Gas sensors based on catalytic metal-gate field-effect devicesSensors and Actuators, 1986
- PdInP Schottky diode hydrogen sensorsSolid-State Electronics, 1982
- A study of Pd/Si MIS Schottky barrier diode hydrogen detectorIEEE Transactions on Electron Devices, 1981
- Hydrogen-sensitive Schottky barrier diodesSurface Science, 1979
- Palladium/cadmium-sulfide Schottky diodes for hydrogen detectionApplied Physics Letters, 1976