μTrench phase-change memory cell engineering and optimization
- 13 December 2005
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Phase-change memory (PCM) cell is the most promising technology as post-flash nonvolatile memory (NVM). Among the different proposed cell structures, /spl mu/trench allows to simultaneously achieve low programming currents, small cell size, easy tunability and good dimensional control. Aim of this paper is to investigate the optimization and fine tuning capability of this cell architecture. Based on theoretical analysis and experimental results, the dependence of the PCM electrical parameters on the cell structure and on the geometric dimensions is assessed. An optimized /spl mu/trench cell with a programming current of 450 /spl mu/A at 1.5 V and a set resistance of 5 k/spl Omega/ is finally presented.Keywords
This publication has 7 references indexed in Scilit:
- Electrothermal and phase-change dynamics in chalcogenide-based memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Low-cost and nanoscale non-volatile memory concept for future silicon chipsNature Materials, 2005
- Reliability Study of Phase-Change Nonvolatile MemoriesIEEE Transactions on Device and Materials Reliability, 2004
- Current status of the phase change memory and its futurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Scaling analysis of phase-change memory technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- An edge contact type cell for Phase Change RAM featuring very low power consumptionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004