High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor
- 1 October 2012
- journal article
- Published by IOP Publishing in Chinese Physics B
- Vol. 21 (10), 108503
- https://doi.org/10.1088/1674-1056/21/10/108503
Abstract
A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor (HEMT). An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence, beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress. While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress, the recovery is attributed to high field induced electron detrapping. The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.Keywords
This publication has 19 references indexed in Scilit:
- Investigation of passivation effects in AlGaN/GaN metal—insulator—semiconductor high electron-mobility transistor by gate—drain conductance dispersion studyChinese Physics B, 2011
- Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate PumpingIEEE Electron Device Letters, 2011
- GaN HEMT reliabilityMicroelectronics Reliability, 2009
- Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)Chinese Physics B, 2009
- Anomalous Kink Effect in GaN High Electron Mobility TransistorsIEEE Electron Device Letters, 2008
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and PerspectivesIEEE Transactions on Device and Materials Reliability, 2008
- Critical Voltage for Electrical Degradation of GaN High-Electron Mobility TransistorsIEEE Electron Device Letters, 2008
- Very-high power density AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- Undoped AlGaN/GaN HEMTs for microwave power amplificationIEEE Transactions on Electron Devices, 2001