InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$
- 4 April 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 33 (6), 782-784
- https://doi.org/10.1109/led.2012.2189546
Abstract
Vertical n-channel tunnel field-effect transistors (TFETs) with tunneling normal to the gate based on an n+ In∞=0.53->;1GaAs/p+ InP heterojunction have been demonstrated to exhibit simultaneously a high ION/IOFF ratio of 6 × 105, a minimum subthreshold swing (SS) of 93 mV/dec, and an on-current of 20 μA/μm at VDS = 0.5 V and a gate swing of 1.75 V at 300 K, a record TFET performance. The significant improvement in device performance is ascribed to the adoption of a thin equivalent oxide thickness (EOT) of ~1.3 nm for improved electrostatics and the use of plasma-enhanced chemical vapor deposition SiN∞ mesa passivation to preserve the integrity of the thin exposed semiconductor layers.Keywords
This publication has 13 references indexed in Scilit:
- AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 VIEEE Electron Device Letters, 2012
- Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the GateIEEE Electron Device Letters, 2011
- Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their ScalabilitiesApplied Physics Express, 2011
- Prospect of tunneling green transistor for 0.1V CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FETIEEE Electron Device Letters, 2010
- Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETsIEEE Transactions on Electron Devices, 2010
- Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slopePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Charge Accumulation at InAs SurfacesPhysical Review Letters, 1996