Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell
- 15 February 2008
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 103 (7), 07A711
- https://doi.org/10.1063/1.2839288
Abstract
We have developed a write-line-inserted magnetic tunnelingjunction(MTJ) (WLIM) for use in low-write-current magnetoresistance random access memory (MRAM). The write current of the WLIM was reduced to 0.98 mA and its thermal stability factor was 85 for a 0.32 × 0.48 μ m 2 MTJ. We evaluated the switching property of the WLIM in an external magnetic field ( H sw ̱ ext ) and an internal magnetic field ( H sw ̱ int ) . We found that H sw ̱ ext was larger than H sw ̱ int when the aspect ratio of the MTJs was less than 1.5. Furthermore, we obtained a high write-current magnetic-field efficiency of 13.0 Oe ∕ mA when the aspect ratio of the MTJs was low. These properties mean that the WLIM structure has advantages for use in low-write-current MRAM.Keywords
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