Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer
- 12 June 2008
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 19 (30), 305704
- https://doi.org/10.1088/0957-4484/19/30/305704
Abstract
A self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. Pt NPs with a narrow size distribution (diameter ∼4 nm) were synthesized via an alcohol reduction method. The monolayer of these Pt NPs was immobilized on a SiO(2) substrate using poly(4-vinylpyridine) (P4VP) as a surface modifier. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window of 5.8 V under ± 7 V for program/erase voltage. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices.This publication has 18 references indexed in Scilit:
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