Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxy
- 23 October 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (17), 1830-1832
- https://doi.org/10.1103/PhysRevLett.63.1830
Abstract
Initial stages of Si epitaxial growth on vicinal Si(001) substrates were investigated using scanning tunneling microscopy. For a growth temperature of about 750 K it was found that initial growth occurs almost exclusively at one of the two nonequivalent types of step edge. This leads to the formation of a single-domain surface with an array of evenly spaced straight steps with biatomic height. This structure can be preserved by quenching the sample to room temperature.Keywords
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