Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
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Open Access
- 22 July 2013
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (4), 041118
- https://doi.org/10.1063/1.4816837
Abstract
We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction.Keywords
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