A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
- 12 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (7), 623-625
- https://doi.org/10.1063/1.102717
Abstract
A two‐terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700 °C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority‐carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.This publication has 6 references indexed in Scilit:
- 27.6% efficiency (1 sun, air mass 1.5) monolithic Al0.37Ga0.63As/GaAs two-junction cascade solar cell with prismatic cover glassApplied Physics Letters, 1989
- Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfacesApplied Physics Letters, 1989
- Electroreflectance and photoreflectance of GaInPSolar Cells, 1988
- Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasersJournal of Crystal Growth, 1986
- In situ characterization of MOCVD growth processes by light scattering techniquesJournal of Crystal Growth, 1986
- Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69)Journal of Applied Physics, 1986