Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
- 2 February 2000
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 209 (4), 581-590
- https://doi.org/10.1016/s0022-0248(99)00634-x
Abstract
No abstract availableKeywords
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