Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon
- 24 May 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (21), 3143-3145
- https://doi.org/10.1063/1.124089
Abstract
Effects of interfacial layer growth on reactively sputter-deposited TiO2 films were studied. Leakage current was reduced to 10−8 A/cm2 at +1 V after annealing in oxygen ambient and showed tunneling-like temperature dependence. As the interfacial layer grew, interface states and hysteresis were improved significantly. However, the reliability was degraded as the annealing temperature increased.Keywords
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