An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (7), 323-325
- https://doi.org/10.1109/55.772364
Abstract
An Al/sub 0.3/Ga/sub 0.7/N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-/spl mu/m gate length is reported. A source-drain ohmic contact resistance of 0.15-/spl Omega/-mm was achieved through the use of high Al content and high n-type doping (1E19 cm/sup -3/) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.Keywords
This publication has 16 references indexed in Scilit:
- DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substratesIEEE Electron Device Letters, 1998
- High performance AlGaN/GaN HEMT with improved Ohmic contactsElectronics Letters, 1998
- Study of contact formation in AlGaN/GaN heterostructuresApplied Physics Letters, 1997
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHzIEEE Electron Device Letters, 1997
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- GaN/AlGaN MODFET with 80 GHz fmax and >100 V gate-drain breakdown voltageElectronics Letters, 1997
- CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHzIEEE Electron Device Letters, 1996
- Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substratesApplied Physics Letters, 1996
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993