Measurement of Carrier Mobility in Silicon Nanowires
- 30 April 2008
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 8 (6), 1566-1571
- https://doi.org/10.1021/nl072646w
Abstract
We report the first direct capacitance measurements of silicon nanowires (SiNWs) and the consequent determination of field carrier mobilities in undoped-channel SiNW field-effect transistors (FETs) at room temperature. We employ a two-FET method for accurate extraction of the intrinsic channel resistance and intrinsic channel capacitance of the SiNWs. The devices used in this study were fabricated using a top-down method to create SiNW FETs with up to 1000 wires in parallel for increasing the raw capacitance while maintaining excellent control on device dimensions and series resistance. We found that, compared with the universal mobility curves for bulk silicon, the electron and hole mobilities in nanowires are comparable to those of the surface orientation that offers a lower mobility.Keywords
This publication has 20 references indexed in Scilit:
- Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility AssessmentNano Letters, 2007
- Giant piezoresistance effect in silicon nanowiresNature Nanotechnology, 2006
- Erratum: Orientation-DependentElectronic Structures Revealed by Photoemission Spectroscopy [Phys. Rev. Lett.93, 197601 (2004)]Physical Review Letters, 2005
- Electrical Properties of 0.4 cm Long Single-Walled Carbon NanotubesNano Letters, 2004
- Extraordinary Mobility in Semiconducting Carbon NanotubesNano Letters, 2003
- Ballistic carbon nanotube field-effect transistorsNature, 2003
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gatesNature Materials, 2002
- Epitaxial core–shell and core–multishell nanowire heterostructuresNature, 2002
- On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientationIEEE Transactions on Electron Devices, 1994
- Charge accumulation and mobility in thin dielectric MOS transistorsSolid-State Electronics, 1982