Giant piezoresistance effect in silicon nanowires
Top Cited Papers
- 4 October 2006
- journal article
- letter
- Published by Springer Science and Business Media LLC in Nature Nanotechnology
- Vol. 1 (1), 42-46
- https://doi.org/10.1038/nnano.2006.53
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Mechanical properties of ultrahigh-strength gold nanowiresNature Materials, 2005
- Si Nanowire Bridges in Microtrenches: Integration of Growth into Device FabricationAdvanced Materials, 2005
- Novel electrical detection of label-free disease marker proteins using piezoresistive self-sensing micro-cantileversBiosensors and Bioelectronics, 2004
- Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 2004
- Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistorsJournal of Applied Physics, 2003
- Electronic Transport through Carbon Nanotubes: Effects of Structural Deformation and Tube ChiralityPhysical Review Letters, 2002
- Reversible electromechanical characteristics of carbon nanotubes underlocal-probe manipulationNature, 2000
- Atomic resolution with an atomic force microscope using piezoresistive detectionApplied Physics Letters, 1993
- Silicon Diffused-Element Piezoresistive DiaphragmsJournal of Applied Physics, 1962
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954