Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
- 15 January 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (2), 801-804
- https://doi.org/10.1063/1.371944
Abstract
The dependence of the Schottky barrier height of Ni/AlxGa1−xN contact on the Al mole fraction up to x=0.23 was studied. The barrier heights were measured by I–V, capacitance–voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x<0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x=0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface.Keywords
This publication has 16 references indexed in Scilit:
- Characterisation of rhenium Schottky contacts on n-type AlxGa1–xNElectronics Letters, 1999
- Fabrication and characterisation of enhanced barrier AlGaN/GaN HFETElectronics Letters, 1999
- Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructureApplied Physics Letters, 1998
- AlGaN/GaN high electron mobility field effect transistors with low 1/f noiseApplied Physics Letters, 1998
- The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodesJournal of Applied Physics, 1998
- High power AlGaN/GaN HEMTs for microwave applicationsSolid-State Electronics, 1997
- Effective masses and valence-band splittings in GaN and AlNPhysical Review B, 1997
- Thermally stable PtSi Schottky contact on n-GaNApplied Physics Letters, 1997
- A study on barrier height of AuAlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20Solid-State Electronics, 1997
- Hall measurements and contact resistance in doped GaN/AlGaN heterostructuresApplied Physics Letters, 1996