Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
Top Cited Papers
- 29 April 2011
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 332 (6029), 568-570
- https://doi.org/10.1126/science.1201938
Abstract
The crystallinity and resistivity of a compound semiconductor was changed with current pulses delivered by nanoelectrodes.Keywords
Funding Information
- Office of Naval Research
- National Science Foundation
This publication has 24 references indexed in Scilit:
- Resistive Switching in Nanogap Systems on SiO2 SubstratesSmall, 2009
- Phase Change Materials and Their Application to Nonvolatile MemoriesChemical Reviews, 2009
- Threshold field of phase change memory materials measured using phase change bridge devicesApplied Physics Letters, 2009
- Nanosecond switching in GeTe phase change memory cellsApplied Physics Letters, 2009
- Carbon Nanotubes as Injection Electrodes for Organic Thin Film TransistorsNano Letters, 2009
- Fast phase transitions induced by picosecond electrical pulses on phase change memory cellsApplied Physics Letters, 2008
- Highly scalable non-volatile and ultra-low-power phase-change nanowire memoryNature Nanotechnology, 2007
- Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devicesJournal of Applied Physics, 2007
- Low-cost and nanoscale non-volatile memory concept for future silicon chipsNature Materials, 2005
- Miniature Organic Transistors with Carbon Nanotubes as Quasi-One-Dimensional ElectrodesJournal of the American Chemical Society, 2004