Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins
- 31 December 2009
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 53 (12), 1303-1312
- https://doi.org/10.1016/j.sse.2009.09.015
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETsSolid-State Electronics, 2009
- Correlation of fin shape fluctuations to FinFET electrical variability and noise margins of 6-T SRAM cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate lengthPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Impact of LER and Random Dopant Fluctuations on FinFET Matching PerformanceIEEE Transactions on Nanotechnology, 2008
- A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free PackagingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Impact of Line-Edge Roughness on FinFET Matching PerformanceIEEE Transactions on Electron Devices, 2007
- Sensitivity of double-gate and finfet devices to process variationsIEEE Transactions on Electron Devices, 2003
- Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughnessIEEE Transactions on Electron Devices, 2003
- Essential physics of carrier transport in nanoscale MOSFETsIEEE Transactions on Electron Devices, 2002