Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films
- 1 January 1996
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Raman determination of phonon deformation potentials in α-GaNSolid State Communications, 1996
- Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphireApplied Physics Letters, 1996
- Elastic constants of gallium nitrideJournal of Applied Physics, 1996
- Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN filmsApplied Physics Letters, 1996
- Carrier localization of as-grownn-type gallium nitride under large hydrostatic pressurePhysical Review B, 1996
- Thermal stress in GaN epitaxial layers grown on sapphire substratesJournal of Applied Physics, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Pressure studies of gallium nitride: Crystal growth and fundamental electronic propertiesPhysical Review B, 1992
- Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressurePhysical Review B, 1992
- Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and: Anharmonic effectsPhysical Review B, 1984