Conductance and capacitance studies in GaP Schottky barriers
- 1 December 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (12), 5173-5178
- https://doi.org/10.1063/1.322194
Abstract
A study of the conductance and capacitance associated with traps in Schottky barriers is described. A sample calculation of these two quantities is developed and compared with experimental data obtained in GaP VPE saples. It is shown that traps introduce peaks on the conductance‐vs‐temperatures curves; from them the concentration of each trap can be calculated. A study at different frequencies permits the determination of the characteristics of the traps. In GaP we have observed trapping effects in donor levels at Ec−Et?100 and 86 meV, the emission rates were found, respectively, to equal 2×1011 and 2×109 s−1 for these two levels. It is also shown that photoconductance effects occur at the oxygen deep levels.Keywords
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