Photocapacitance Studies of the Oxygen Donor in GaP. I. Optical Cross Sections, Energy Levels, and Concentration
- 15 March 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 7 (6), 2486-2499
- https://doi.org/10.1103/physrevb.7.2486
Abstract
Photocapacitance studies in GaP junctions have given new insight to the deep states associated with the O donor. In addition to the well-known neutral state in which O binds an electron by 0.9 eV, a new state in which O deeply binds a second electron was discovered. The second electron is captured into a level ∼ 0.45 eV deep, after which lattice relaxation increases the average optical-ionization energy to ∼ 2.0 eV. The role of lattice relaxation was established by studying the temperature dependence of the photoionization of the trapped electrons. Profile measurements of the O-donor density through the depletion layer indicated a decrease in O-donor concentration from 1.5× on to 4× on the side. Optical cross sections and thermal-emission rates of both electrons were measured. Both electrons were stable below 100 °C.
Keywords
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