Silicon nanowires grown on iron-patterned silicon substrates

Abstract

This letter reports the synthesis of silicon nanowires on iron-patterned silicon substrates in a controlled fashion using a method involving thermal evaporation of pure silicon powder. The positions of these silicon nanowires were controlled by depositing iron in desired areas on the substrates. Transmission electron microscopy, high-resolution transmission electron microscopy, and scanning electron microscopy images indicate that the products are straight crystalline silicon nanowires with diameters of 10–60 nm. The formation mechanism of the nanowires is discussed.