High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer
- 13 May 2008
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 5 (6), 2037-2040
- https://doi.org/10.1002/pssc.200778738
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006
- GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectricApplied Physics Letters, 2005
- AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic TechniquePublished by Japan Society of Applied Physics ,2003