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AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique
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AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique
AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique
MK
Masahito Kanamura
Masahito Kanamura
TK
Toshihide Kikkawa
Toshihide Kikkawa
NA
Nobuo Adachi
Nobuo Adachi
TK
Tokuharu Kimura
Tokuharu Kimura
SY
Shigeru Yokogawa
Shigeru Yokogawa
MN
Masaki Nagahara
Masaki Nagahara
NH
Naoki Hara
Naoki Hara
KJ
Kazukiyo Joshin
Kazukiyo Joshin
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1 January 2003
conference paper
conference paper
Published by
Japan Society of Applied Physics
https://doi.org/10.7567/ssdm.2003.g-9-3
Abstract
2003 International Conference on Solid State Devices and Materials,Search for presentations
Keywords
STRUCTURE
ALGAN/GAN
OHMIC
POWER HEMTS
RECESSED
USING SURFACE CHARGE
HEMTS USING SURFACE
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Open Access
Cited by 4 articles