Analytic Circuit Model of Ballistic Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor for Transient Analysis
- 20 February 2013
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 52 (4S), 04CN01
- https://doi.org/10.7567/jjap.52.04cn01
Abstract
A fully analytic and explicit model of device properties in the ballistic transport in gate-all-around metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed, which enables circuit simulations. The electrostatic potential distribution in the wire cross section is approximated by a parabolic function. Using the applied potential, the energy levels of electrons are analytically obtained in terms of a single unknown parameter by perturbation theory. Ballistic current is obtained in terms of an unknown parameter using the analytic expression of the electron energy level and the current equation for ballistic transport. We analytically derive the parameter with a one-of-a-kind approximate methodology. With the obtained parameter, the fully analytic and explicit model of device properties such as energy levels, ballistic current, and effective capacitance is derived with satisfactory accuracy compared with the numerical simulation results. Finally, we perform a transient simulation using a circuit simulator, introducing our model to it as a Verilog-A script.Keywords
This publication has 17 references indexed in Scilit:
- R -matrix theory of quantum transport and recursive propagation method for device simulationsJournal of Applied Physics, 2008
- Ballistic/quasi-ballistic transport in nanoscale transistorApplied Surface Science, 2008
- Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistorsJournal of Applied Physics, 2008
- Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 2008
- On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire TransistorsIEEE Transactions on Electron Devices, 2005
- Modeling of Nanoscale Gate-All-Around MOSFETsIEEE Electron Device Letters, 2004
- Theory of ballistic nanotransistorsIEEE Transactions on Electron Devices, 2003
- Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistorJournal of Applied Physics, 2003
- Multi-Subband Effects on Performance Limit of Nanoscale MOSFETsJapanese Journal of Applied Physics, 2003
- Elementary scattering theory of the Si MOSFETIEEE Electron Device Letters, 1997