22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications
Open Access
- 1 December 2016
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 2.2.1-2.2.4
- https://doi.org/10.1109/iedm.2016.7838029
Abstract
22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ~30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910μ/μm (856μ/μm) at 0.8 V and 100nA/μm Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V V min for 8T logic libraries, as well as 0.62V and 0.52V V min for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/μm I off , and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high f T /f MAx of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high f MAx extends the capabilities to 5G and milli-meter wave (>24GHz) RF applications.Keywords
This publication has 5 references indexed in Scilit:
- 14nm FDSOI upgraded device performance for ultra-low voltage operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2015
- 14nm FDSOI technology for high speed and energy efficient applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2012
- A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM CellsIEEE Transactions on Electron Devices, 2011