High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- 1 December 2012
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 18.1.1-18.1.4
- https://doi.org/10.1109/iedm.2012.6479063
Abstract
For the first time, we report high performance hybrid channel ETSOI CMOS by integrating strained SiGe-channel (cSiGe) PFET with Si-channel NFET at 22nm groundrules. We demonstrate a record high speed ring oscillator (fan-out = 3) with delay of 8.5 ps/stage and 11.2 ps/stage at V DD = 0.9V and V DD = 0.7V, respectively, outperforming state-of-the-art finFET results. A novel “STI-last” integration scheme is developed to improve cSiGe uniformity and enable ultra high performance PFET with narrow widths. Furthermore, cSiGe modulates device V t , thus providing an additional knob to enable multi-V t while maintaining undoped channels for all devices.Keywords
This publication has 1 reference indexed in Scilit:
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