Optical properties of Ge1-x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm
- 12 August 2013
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (7), 072111
- https://doi.org/10.1063/1.4818673
Abstract
Ge1-x-ySixSny alloys with y > x have been grown directly on Si substrates. Room temperature photoluminescence measurements indicate that the alloys have direct bandgaps below that of pure Ge, thus representing an alternative to tensile-strained Ge and to Ge1-ySny for long-wavelength applications. In comparison with binary Ge1-ySny alloys, ternary Ge1-x-ySixSny alloys have superior stability due to their increased mixing entropy. The observation of photoluminescence from these films confirms that high-quality material can be grown in spite of the large size mismatch between Si and Sn.Keywords
This publication has 25 references indexed in Scilit:
- Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)Chemistry of Materials, 2012
- Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on siliconApplied Physics Letters, 2010
- High-performance Ge-on-Si photodetectorsNature Photonics, 2010
- Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductorsThin Solid Films, 2010
- Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)Applied Physics Letters, 2009
- Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bandsSemiconductor Science and Technology, 2009
- Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge LayersJapanese Journal of Applied Physics, 2009
- Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor AlloysPhysical Review Letters, 2009
- Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructuresSuperlattices and Microstructures, 1993
- Direct-gap group IV semiconductors based on tinIEE Proceedings I Solid State and Electron Devices, 1982