Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys
- 13 March 2009
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 102 (10), 107403
- https://doi.org/10.1103/physrevlett.102.107403
Abstract
A direct absorption edge tunable between 0.8 and ∼1.4 eV is demonstrated in strain-free ternary Ge1−x−ySixSny alloys epitaxially grown on Ge-buffered Si. This decoupling of electronic structure and lattice parameter—unprecedented in group-IV alloys—opens up new possibilities in silicon photonics, particularly in the field of photovoltaics. The compositional dependence of the direct band gap in Ge1−x−ySixSny exhibits a nonmonotonic behavior that is explained in terms of coexisting small and giant bowing parameters in the two-dimensional compositional space.This publication has 15 references indexed in Scilit:
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