Solar-Blind Photodetectors for Harsh Electronics
Open Access
- 11 September 2013
- journal article
- Published by Springer Science and Business Media LLC in Scientific Reports
- Vol. 3 (1), 2628
- https://doi.org/10.1038/srep02628
Abstract
We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.This publication has 38 references indexed in Scilit:
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